I-BQ25611DRTWR Ukuphathwa Kwebhethri I-I2C ilawula ishaja yebhethri engu-1-cell 3-A etholakala nge-USB kanye nokusebenza kwe-boost 1.2-A 24-WQFN -40 kuya ku-85
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | Texas Instruments |
| Isigaba somkhiqizo: | Ukuphathwa Kwebhethri |
| Ukupakishwa: | I-reel |
| Ukupakishwa: | Sika Tape |
| Ibhrendi: | Texas Instruments |
| Kuyazwela umswakama: | Yebo |
| Uhlobo Lomkhiqizo: | Ukuphathwa Kwebhethri |
| Inani Lephakethe Lefekthri: | 3000 |
| Isigaba esingaphansi: | PMIC - Power Management ICs |
♠ I-BQ25611D I2C Elawulwa I-1-Cell 3.0-A Ishaja Yebhethri Lebhaka Enokutholwa kwe-USB kanye nokusebenza kwe-1.2-A Boost
I-BQ25611D iyisisetshenziswa esididiyelwe kakhulu sokuphatha ukushajwa kwebhethri engu-3-A kanye nedivayisi yokulawula indlela yamandla yeseli eyodwa i-Li-Ion nebhethri ye-Lipolymer.Isixazululo sihlanganiswe kakhulu ne-FET (RBFET, Q1), eshintsha uhlangothi oluphezulu lwe-FET (HSFET, Q2), i-FET ehlangothini oluphansi (LSFET, Q3), kanye ne-FET yebhethri (BATFET, Q4) phakathi kwesistimu nebhethri.Indlela yamandla e-impedance ephansi ilungiselela ukusebenza kahle kwemodi yokushintsha, inciphisa isikhathi sokushajwa kwebhethri futhi inwebe isikhathi sokusebenza kwebhethri phakathi nesigaba sokushajwa.
I-BQ25611D ididiyelwe kakhulu lokuphatha ukushajwa kwebhethri engu-3-A kanye nedivayisi yokuphatha Indlela Yamandla yesistimu yamabhethri e-Li-ion ne-Li-polymer.Ifaka ukushaja okusheshayo okunokwesekwa kwamandla kagesi aphezulu ezinhlobonhlobo zezinhlelo zokusebenza ezihlanganisa amafoni ahlakaniphile namathebulethi.Indlela yayo yamandla e-impedance ephansi ilungiselela ukusebenza kahle kwemodi yokushintsha, inciphisa isikhathi sokushajwa kwebhethri, futhi inwebe isikhathi sokusebenza kwebhethri phakathi nesigaba sokushajwa.I-voltage yayo yokufaka nokulawula kwamanje kanye nenzwa yerimothi yebhethri iletha amandla amakhulu wokushaja ebhethrini.
• Ukusebenza kahle okuphezulu, i-1.5-MHz, ishaja yebhali yemodi yokushintsha evumelanayo
– 92% ukushaja ukusebenza kahle ku-2-A kusuka ku-5-V okokufaka
– ±0.4% ukulawulwa kwamandla kagesi ngesinyathelo esingu-10-mV
– Programmable JEITA imibundu
– Inzwa yebhethri ekude ukushaja ngokushesha
• Isekela i-USB On-The-Go (OTG) ephumayo elungisekayo ukusuka ku-4.6 V ukuya ku-5.15 V
- Thuthukisa isiguquli esifinyelela ku-1.2-A okukhiphayo
- 92% kuthuthukisa ukusebenza kahle kokuphuma kwe-1-A
- Umkhawulo onembile ongaguquki wamanje (CC).
- Ukuqala okuthambile kufika ku-500-µF umthwalo we-capacitive
• Okokufaka okukodwa okusekela okokufaka kwe-USB, i-adaptha enamandla amakhulu, noma amandla angenawaya
- Isekela i-4-V kuya ku-13.5-V uhla lwamandla okufaka ama-22-V absolute max okufakwayo
– 130-ns okokufaka kokucisha okusheshayo ngaphezu kokuvikelwa kwamandla kagesi
- Umkhawulo wamanje wokufaka ohlelekayo (IINDPM) nge-I
2C (100-mA ukuya ku-3.2-A, 100-mA/step)
- Umkhawulo we-VINDPM ofika ku-5.4-V ulandelela ngokuzenzakalelayo i-voltage yebhethri ukuze uthole amandla aphezulu
- Thola ngokuzenzakalelayo i-USB SDP, i-CDP, i-DCP nama-adaptha angajwayelekile
• Ukuphathwa kwendlela yamandla e-VDC (NVDC) emincane
- Ukuvulwa kwesistimu ngokushesha ngaphandle kwebhethri noma ibhethri elikhishwe ngokujulile
• I-RDSON 19.5-mΩ BATFET ephansi ukuze unciphise ukulahleka kokushaja futhi andise isikhathi sokusebenza kwebhethri
- Ukulawulwa kwe-BATFET yemodi yomkhumbi, nokusetha kabusha uhlelo olugcwele nge-adaptha nangaphandle kwayo
• 7-µA ukuvuza kwebhethri eliphansi kwamanje kumodi yomkhumbi
• 9.5-µIbhethri elivuza lamanje elinokulinda kwesistimu
• Ukunemba okuphezulu kwephrofayili yokushaja ibhethri
- ± 6% ukushaja umthethonqubo wamanje
- ± 7.5% ukulawulwa kwamanje okokufaka
- ± 3% ukulawulwa kwamandla kagesi we-VINDPM
- Isibali sikhathi esilungisekayo sokushaja ibhethri eligcwele
• Ukuhlanganiswa okuphezulu kuhlanganisa wonke ama-MOSFET, izinzwa zamanje kanye nesinxephezelo se-loop
• Izitifiketi Ezihlobene Nokuphepha: – I-IEC 62368-1 CB Isitifiketi
• Ifoni ephathekayo, ithebhulethi
• Izimboni, zezokwelapha, zikagesi eziphathwayo
