I-CSD88537ND MOSFET 60-V Dual N-Channel Power MOSFET
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | Texas Instruments |
| Isigaba somkhiqizo: | I-MOSFET |
| I-RoHS: | Imininingwane |
| Ubuchwepheshe: | Si |
| Isitayela Sokukhweza: | I-SMD/SMT |
| Iphakheji/Ikesi: | I-SOIC-8 |
| I-Transistor Polarity: | Isiteshi se-N |
| Inombolo Yeziteshi: | 2 Isiteshi |
| I-Vds - I-Drain-Source Breakdown Voltage: | 60v |
| I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 16 A |
| I-Rds On - I-Drain-Source Resistance: | 15 mhm |
| I-Vgs - I-Gate-Source Voltage: | - 20 V, + 20 V |
| I-Vgs th - I-Gate-Source Threshold Voltage: | 2.6 V |
| Qg - Ukukhokhiswa kwesango: | 14 nc |
| Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
| Ubukhulu Bezinga Lokushisa Lokusebenza: | + 150 C |
| I-Pd - Ukuchithwa kwamandla: | 2.1 W |
| Imodi yesiteshi: | Ukuthuthukisa |
| Igama lokuhweba: | I-NexFET |
| Ukupakishwa: | I-reel |
| Ukupakishwa: | Sika Tape |
| Ukupakishwa: | I-MouseReel |
| Ibhrendi: | Texas Instruments |
| Ukucushwa: | Okukabili |
| Isikhathi sokuwa: | 19 ns |
| Ubude: | 1.75 mm |
| Ubude: | 4.9 mm |
| Uhlobo Lomkhiqizo: | I-MOSFET |
| Isikhathi Sokuvuka: | 15 ns |
| Uchungechunge: | I-CSD88537ND |
| Inani Lephakethe Lefekthri: | 2500 |
| Isigaba esingaphansi: | Ama-MOSFET |
| Uhlobo lwe-Transistor: | 2 Isiteshi se-N |
| Isikhathi Esijwayelekile Sokubambezeleka Kokuvala: | 5 ns |
| Isikhathi Sokubambezeleka Kokuvula Okujwayelekile: | 6 ngi |
| Ububanzi: | 3.9 mm |
| Isisindo Seyunithi: | 74 mg |
♠ CSD88537ND Dual 60-V N-Channel NexFET™ Power MOSFET
Le dual SO-8, 60 V, 12.5 mΩ NexFET™ yamandla e-MOSFET yakhelwe ukusebenza njengebhuloho elinguhhafu ezinhlelweni zokusebenza zamanje zokulawula izinjini.
• I-Ultra-Low Qg ne-Qgd
• I-Avalanche Ilinganiselwe
• Pb Mahhala
• Ithobelana ne-RoHS
• I-Halogen Mahhala
• Ibhuloho eliyiHalf for Motor Control
• I-Synchronous Buck Converter
