FDV301N MOSFET N-Ch Digital
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | wonke |
| Isigaba somkhiqizo: | I-MOSFET |
| I-RoHS: | Imininingwane |
| Ubuchwepheshe: | Si |
| Isitayela Sokukhweza: | I-SMD/SMT |
| Iphakheji / Ikesi: | I-SOT-23-3 |
| I-Transistor Polarity: | Isiteshi se-N |
| Inombolo Yeziteshi: | Isiteshi esingu-1 |
| I-Vds - I-Drain-Source Breakdown Voltage: | 25 V |
| I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 220 mA |
| I-Rds On - I-Drain-Source Resistance: | 5 ohm |
| I-Vgs - I-Gate-Source Voltage: | - 8V, + 8V |
| I-Vgs th - I-Gate-Source Threshold Voltage: | 700 mv |
| Qg - Ukukhokhiswa kwesango: | 700 pc |
| Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
| Ubukhulu Bezinga Lokushisa Lokusebenza: | + 150 C |
| I-Pd - Ukuchithwa kwamandla: | 350 mW |
| Imodi yesiteshi: | Ukuthuthukisa |
| Ukupakishwa: | I-reel |
| Ukupakishwa: | Sika Tape |
| Ukupakishwa: | I-MouseReel |
| Ibhrendi: | ukuqala / Fairchild |
| Ukucushwa: | Awushadile |
| Isikhathi sokuwa: | 6 ngi |
| I-Transconductance Phambili - Min: | 0.2 S |
| Ubude: | 1.2 mm |
| Ubude: | 2.9 mm |
| Umkhiqizo: | Isiginali Encane ye-MOSFET |
| Uhlobo Lomkhiqizo: | I-MOSFET |
| Isikhathi Sokuvuka: | 6 ngi |
| Uchungechunge: | I-FDV301N |
| Inani Lephakethe Lefekthri: | 3000 |
| Isigaba esingaphansi: | Ama-MOSFET |
| Uhlobo lwe-Transistor: | 1 Isiteshi se-N |
| Uhlobo: | I-FET |
| Isikhathi Esijwayelekile Sokubambezeleka Kokuvala: | 3.5 ns |
| Isikhathi Sokubambezeleka Kokuvula Okujwayelekile: | 3.2 ns |
| Ububanzi: | 1.3 mm |
| Ingxenye # Iziteketiso: | I-FDV301N_NL |
| Isisindo Seyunithi: | 0.000282 oz |
♠ I-Digital FET, N-Channel FDV301N, FDV301N-F169
Le N-Channel logic level level level effect transistor ikhiqizwa kusetshenziswa i-onsemi's proprietary, high cell density, ubuchwepheshe be-DMOS.Le nqubo yokuminyana okuphezulu kakhulu iklanyelwe ukunciphisa ukumelana nesimo.Le divayisi yakhelwe ikakhulukazi izinhlelo zokusebenza zamandla kagesi aphansi njengokungena esikhundleni sama-transistors edijithali.Njengoba kungadingeki izinto eziphikisa ukuchema, le N−channel FET eyodwa ingangena esikhundleni sama-transistors edijithali amaningana, ngamavelu ahlukene aphikisayo okuchema.
• 25 V, 0.22 A Continuous, 0.5 A Peak
♦ RDS(ku) = 5 @ VGS = 2.7 V
♦ RDS(ku) = 4 @ VGS = 4.5 V
• Izidingo Zedrayivu Yesango Eliphansi Kakhulu Ezivumela Ukusebenza Okuqondile Kuziyingi ezingu-3 V.I-VGS(th) <1.06 V
• I-Gate−Source Zener ye-ESD Ruggedness.> 6 kV Human Body Model
• Faka esikhundleni sama-NPN Digital Transistors nge-One DMOS FET
• Le divayisi i-Pb−Free futhi Ayina-Halide
