IPD50N04S4-10 MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | I-Infineon |
| Isigaba somkhiqizo: | I-MOSFET |
| I-RoHS: | Imininingwane |
| Ubuchwepheshe: | Si |
| Isitayela Sokukhweza: | I-SMD/SMT |
| Iphakheji/Ikesi: | KUYA-252-3 |
| I-Transistor Polarity: | Isiteshi se-N |
| Inombolo Yeziteshi: | Isiteshi esingu-1 |
| I-Vds - I-Drain-Source Breakdown Voltage: | 40 v |
| I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 50 A |
| I-Rds On - I-Drain-Source Resistance: | 9.3 mhm |
| I-Vgs - I-Gate-Source Voltage: | - 20 V, + 20 V |
| I-Vgs th - I-Gate-Source Threshold Voltage: | 3 V |
| Qg - Ukukhokhiswa kwesango: | 18.2 nC |
| Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
| Izinga Lokushisa Eziphezulu Ezisebenzayo: | + 175 C |
| I-Pd - Ukuchithwa kwamandla: | 41 w |
| Imodi yesiteshi: | Ukuthuthukisa |
| Ukufaneleka: | I-AEC-Q101 |
| Igama lokuhweba: | I-OptiMOS |
| Ukupakishwa: | I-reel |
| Ukupakishwa: | Sika Tape |
| Ibhrendi: | I-Infineon Technologies |
| Ukucushwa: | Awushadile |
| Isikhathi sokuwa: | 5 ns |
| Ubude: | 2.3 mm |
| Ubude: | 6.5 mm |
| Uhlobo Lomkhiqizo: | I-MOSFET |
| Isikhathi Sokuvuka: | 7 ngi |
| Uchungechunge: | I-OptiMOS-T2 |
| Inani Lephakethe Lefekthri: | 2500 |
| Isigaba esingaphansi: | Ama-MOSFET |
| Uhlobo lwe-Transistor: | 1 Isiteshi se-N |
| Isikhathi Esijwayelekile Sokubambezeleka Kokuvala: | 4 ns |
| Isikhathi Sokubambezeleka Kokuvula Okujwayelekile: | 5 ns |
| Ububanzi: | 6.22 mm |
| Ingxenye # Iziteketiso: | IPD5N4S41XT SP000711466 IPD50N04S410ATMA1 |
| Isisindo Seyunithi: | 330 mg |
• I-N-channel – Imodi yokuthuthukisa
• I-AEC iqeqeshiwe
• Ukugeleza kabusha kwe-MSL1 kufika ku-260°C
• 175°C izinga lokushisa lokusebenza
• Umkhiqizo Oluhlaza (i-RoHS iyahambisana)
• I-Avalanche engu-100% ihlolwe
