I-NVH820S75L4SPB IGBT Amamojula 750V, 820A SSD
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | wonke |
| Isigaba somkhiqizo: | Amamojula we-IGBT |
| Umkhiqizo: | I-IGBT Silicon Modules |
| Ukucushwa: | 6-Iphakethe |
| Umqoqi- Emitter Voltage VCEO Max: | 750v |
| I-Collector-Emitter Saturation Voltage: | 1.3 V |
| Umqoqi Oqhubekayo wamanje ku-25 C: | 600 A |
| I-Gate-Emitter Leakage Yamanje: | 500 uA |
| I-Pd - Ukuchithwa kwamandla: | 1000 W |
| Iphakheji / Ikesi: | 183AB |
| Izinga Lokushisa Eliphansi Lokusebenza: | - 40 C |
| Ubukhulu Bezinga Lokushisa Lokusebenza: | + 175 C |
| Ukupakishwa: | Ithreyi |
| Ibhrendi: | wonke |
| I-Maximum Gate Emitter Voltage: | 20 V |
| Isitayela Sokukhweza: | I-SMD/SMT |
| Uhlobo Lomkhiqizo: | Amamojula we-IGBT |
| Inani Lephakethe Lefekthri: | 4 |
| Isigaba esingaphansi: | I-IGBTs |
| Ubuchwepheshe: | Si |
| Igama lokuhweba: | I-VE-Trac |
| Isisindo Seyunithi: | 2.843 lbs |
♠ I-Automotive 750 V, 820 A Single Side Direct Cooling 6-Pack Power Module VE-Trac Direct Module NVH820S75L4SPB
I-NVH820S75L4SPB iyimojula yamandla evela emndenini we-VE-Trac Direct wamamojula wamandla adidiyelwe kakhulu anezinyathelo ezijwayelekile zemboni zeHybrid (HEV) kanye nohlelo lokusebenza lwe-inverter ye-traction ye-Electric Vehicle (EV).
Imojula ihlanganisa ama-Field Stop 4 (FS4) 750 V Narrow Mesa IGBT ayisithupha ekucushweni kwe-6−pack, ehamba phambili ekuhlinzekeni ukuminyana kwamanje, kuyilapho inikeza ukuvikelwa okuqinile kwesekethe emfushane kanye nokwanda kwe-voltage yokuvimba.Ukwengeza, ama-FS4 750 V Narrow Mesa IGBT abonisa ukulahlekelwa kwamandla aphansi ngesikhathi sokulayisha okulula, okusiza ukuthuthukisa ukusebenza kahle kwesistimu kuzinhlelo zokusebenza zezimoto.
Ukuze kube lula ukuhlanganisa nokuthembeka, isizukulwane esisha sezikhonkwane zokucindezela-fit zihlanganiswa kumatheminali esignali yemojuli yamandla.Ngaphezu kwalokho, imojula yamandla ine-pin−fin heatsink eyenziwe kahle ku-baseplate.
• Ukupholisa Okuqondile nge-Pin−fin Heatsink Ehlanganisiwe
• I-Ultra−low Stray Inductance
• I-Tvjmax = 175°C Ukusebenza Okuqhubekayo
• I-VCESAT ephansi kanye nokulahlekelwa kokushintsha
• Ibanga Lezimoto FS4 750 V Narrow Mesa IGBT
• Ukubuyisela Ngokushesha I-Diode Chip Technologies
• I-4.2 kV Isolated DBC Substrate
• Kulula Ukuhlanganisa 6−pack Topology
• Le divayisi i-Pb−Free futhi Iyathobelana ne-RoHS
• I-Hybrid kanye ne-Electric Vehicle Traction Inverter
• Iziguquli zamandla aphezulu
