I-SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
♠ Incazelo Yomkhiqizo
Isibaluli Somkhiqizo | Isibaluli senani |
Umkhiqizi: | Vishay |
Isigaba somkhiqizo: | I-MOSFET |
I-RoHS: | Imininingwane |
Ubuchwepheshe: | Si |
Isitayela Sokukhweza: | I-SMD/SMT |
Iphakheji/Ikesi: | SC-89-6 |
I-Transistor Polarity: | I-N-Channel, i-P-Channel |
Inombolo Yeziteshi: | 2 Isiteshi |
I-Vds - I-Drain-Source Breakdown Voltage: | 60v |
I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 500 mA |
I-Rds On - I-Drain-Source Resistance: | 1.4 Ohms, 4 Ohms |
I-Vgs - I-Gate-Source Voltage: | - 20 V, + 20 V |
I-Vgs th - I-Gate-Source Threshold Voltage: | 1 V |
Qg - Ukukhokhiswa kwesango: | 750 pC, 1.7 nC |
Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
Ubukhulu Bezinga Lokushisa Lokusebenza: | + 150 C |
I-Pd - Ukuchithwa kwamandla: | 280mW |
Imodi yesiteshi: | Ukuthuthukisa |
Igama lokuhweba: | I-TrenchFET |
Ukupakishwa: | I-reel |
Ukupakishwa: | Sika Tape |
Ukupakishwa: | I-MouseReel |
Ibhrendi: | I-Vishay Semiconductors |
Ukucushwa: | Okukabili |
I-Transconductance Phambili - Min: | 200 mS, 100 mS |
Ubude: | 0.6 mm |
Ubude: | 1.66 mm |
Uhlobo Lomkhiqizo: | I-MOSFET |
Uchungechunge: | SI1 |
Inani Lephakethe Lefekthri: | 3000 |
Isigaba esingaphansi: | Ama-MOSFET |
Uhlobo lwe-Transistor: | 1 N-Channel, 1 P-Channel |
Isikhathi Esijwayelekile Sokubambezeleka Kokuvala: | 20 ns, 35 n |
Isikhathi Sokubambezeleka Kokuvula Okujwayelekile: | 15 ns, 20 ns |
Ububanzi: | 1.2 mm |
Ingxenye # Iziteketiso: | I-SI1029X-GE3 |
Isisindo Seyunithi: | 32 mg |
• I-Halogen-free Ngokusho kwe-IEC 61249-2-21 Incazelo
• I-TrenchFET® Power MOSFETs
• Izinyathelo Ezincane Kakhulu
• Ukushintsha Okuphezulu
• Ukumelana Okuphansi:
I-N-Channel, 1.40 Ω
Isiteshi se-P, 4 Ω
• I-Threshold Ephansi: ± 2 V (uhlobo.)
• Isivinini Sokushintsha Ngokushesha: 15 ns (uhlobo.)
• I-Gate-Source ESD Evikelwe: 2000 V
• Ihambisana ne-RoHS Directive 2002/95/EC
• Faka esikhundleni I-Digital Transistor, Level-Shifter
• Amasistimu Asebenza Ngebhethri
• Izifunda Zokuguquguqula Ukunikezela Amandla