SI2305CDS-T1-GE3 MOSFET -8V Vds 8V Vgs SOT-23
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | Vishay |
| Isigaba somkhiqizo: | I-MOSFET |
| Ubuchwepheshe: | Si |
| Isitayela Sokukhweza: | I-SMD/SMT |
| Iphakheji / Ikesi: | I-SOT-23-3 |
| I-Transistor Polarity: | Isiteshi se-P |
| Inombolo Yeziteshi: | Isiteshi esingu-1 |
| I-Vds - I-Drain-Source Breakdown Voltage: | 8v |
| I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 5.8 A |
| I-Rds On - I-Drain-Source Resistance: | 35 mhm |
| I-Vgs - I-Gate-Source Voltage: | - 8V, + 8V |
| I-Vgs th - I-Gate-Source Threshold Voltage: | 1 V |
| Qg - Ukukhokhiswa kwesango: | 12 nc |
| Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
| Izinga Lokushisa Eziphezulu Ezisebenzayo: | + 150 C |
| I-Pd - Ukuchithwa kwamandla: | 1.7 W |
| Imodi yesiteshi: | Ukuthuthukisa |
| Igama lokuhweba: | I-TrenchFET |
| Ukupakishwa: | I-reel |
| Ukupakishwa: | Sika Tape |
| Ukupakishwa: | I-MouseReel |
| Ibhrendi: | I-Vishay Semiconductors |
| Ukucushwa: | Awushadile |
| Isikhathi sokuwa: | 10 ns |
| Ubude: | 1.45 mm |
| Ubude: | 2.9 mm |
| Uhlobo Lomkhiqizo: | I-MOSFET |
| Isikhathi Sokuvuka: | 20 ns |
| Uchungechunge: | SI2 |
| Inani Lephakethe Lefekthri: | 3000 |
| Isigaba esingaphansi: | Ama-MOSFET |
| Uhlobo lwe-Transistor: | 1 P-Channel |
| Isikhathi Esijwayelekile Sokubambezeleka Kokuvala: | 40 ns |
| Isikhathi Sokubambezeleka Kokuvula Okujwayelekile: | 20 ns |
| Ububanzi: | 1.6 mm |
| Ingxenye # Iziteketiso: | SI2305CDS-T1-BE3 SI2305CDS-GE3 |
| Isisindo Seyunithi: | 0.000282 oz |
• I-Halogen-free Ngokusho kwe-IEC 61249-2-21 Incazelo
• I-TrenchFET® Power MOSFET
• 100 % Rg Ihloliwe
• Ihambisana ne-RoHS Directive 2002/95/EC
• I-Shintsha Yokulayisha Yamadivayisi Aphathekayo
• I-DC/DC Converter
