I-SI3417DV-T1-GE3 MOSFET 30V Vds 20V Vgs TSOP-6
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | Vishay |
| Isigaba somkhiqizo: | I-MOSFET |
| I-RoHS: | Imininingwane |
| Ubuchwepheshe: | Si |
| Isitayela Sokukhweza: | I-SMD/SMT |
| Iphakheji / Ikesi: | I-TSOP-6 |
| I-Transistor Polarity: | Isiteshi se-P |
| Inombolo Yeziteshi: | Isiteshi esingu-1 |
| I-Vds - I-Drain-Source Breakdown Voltage: | 30 v |
| I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 8 A |
| I-Rds On - I-Drain-Source Resistance: | 36 mhm |
| I-Vgs - I-Gate-Source Voltage: | - 20 V, + 20 V |
| I-Vgs th - I-Gate-Source Threshold Voltage: | 3 V |
| Qg - Ukukhokhiswa kwesango: | 50 nc |
| Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
| Ubukhulu Bezinga Lokushisa Lokusebenza: | + 150 C |
| I-Pd - Ukuchithwa kwamandla: | 4.2 W |
| Imodi yesiteshi: | Ukuthuthukisa |
| Igama lokuhweba: | I-TrenchFET |
| Uchungechunge: | SI3 |
| Ukupakishwa: | I-reel |
| Ukupakishwa: | Sika Tape |
| Ukupakishwa: | I-MouseReel |
| Ibhrendi: | I-Vishay Semiconductors |
| Ukucushwa: | Awushadile |
| Ubude: | 1.1 mm |
| Ubude: | 3.05 mm |
| Uhlobo Lomkhiqizo: | I-MOSFET |
| Inani Lephakethe Lefekthri: | 3000 |
| Isigaba esingaphansi: | Ama-MOSFET |
| Ububanzi: | 1.65 mm |
| Isisindo Seyunithi: | 0.000705 oz |
• I-TrenchFET® Power MOSFET
• 100 % Rg kanye ne-UIS Ihlolwe
• Ukuhlelwa kwezinto:
Ukuze uthole izincazelo zokuhambisana sicela ubheke imininingwane.
• Layisha Ishintsha
• Ukushintsha i-adaptha
• I-DC/DC Converter
• Nge-Mobile Computing/Consumera
