SI7119DN-T1-GE3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | Vishay |
| Isigaba somkhiqizo: | I-MOSFET |
| I-RoHS: | Imininingwane |
| Ubuchwepheshe: | Si |
| Isitayela Sokukhweza: | I-SMD/SMT |
| Iphakheji/Ikesi: | I-PowerPAK-1212-8 |
| I-Transistor Polarity: | Isiteshi se-P |
| Inombolo Yeziteshi: | Isiteshi esingu-1 |
| I-Vds - I-Drain-Source Breakdown Voltage: | 200 V |
| I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 3.8 A |
| I-Rds On - I-Drain-Source Resistance: | 1.05 ohm |
| I-Vgs - I-Gate-Source Voltage: | - 20 V, + 20 V |
| I-Vgs th - I-Gate-Source Threshold Voltage: | 2 V |
| Qg - Ukukhokhiswa kwesango: | 25 nc |
| Izinga Lokushisa Eliphansi Lokusebenza: | - 50 C |
| Izinga Lokushisa Eziphezulu Ezisebenzayo: | + 150 C |
| I-Pd - Ukuchithwa kwamandla: | 52 w |
| Imodi yesiteshi: | Ukuthuthukisa |
| Igama lokuhweba: | I-TrenchFET |
| Ukupakishwa: | I-reel |
| Ukupakishwa: | Sika Tape |
| Ukupakishwa: | I-MouseReel |
| Ibhrendi: | I-Vishay Semiconductors |
| Ukucushwa: | Awushadile |
| Isikhathi sokuwa: | 12 ns |
| I-Transconductance Phambili - Min: | 4 S |
| Ubude: | 1.04 mm |
| Ubude: | 3.3 mm |
| Uhlobo Lomkhiqizo: | I-MOSFET |
| Isikhathi Sokuvuka: | 11 ns |
| Uchungechunge: | SI7 |
| Inani Lephakethe Lefekthri: | 3000 |
| Isigaba esingaphansi: | Ama-MOSFET |
| Uhlobo lwe-Transistor: | 1 P-Channel |
| Isikhathi Esijwayelekile Sokubambezeleka Kokuvala: | 27 ngi |
| Isikhathi Sokubambezeleka Kokuvula Okujwayelekile: | 9 ngi |
| Ububanzi: | 3.3 mm |
| Ingxenye # Iziteketiso: | I-SI7119DN-GE3 |
| Isisindo Seyunithi: | 1 g |
• I-Halogen-free Ngokusho kwe-IEC 61249-2-21 Iyatholakala
• I-TrenchFET® Power MOSFET
• Iphakheji Ye-PowerPAK® Yokumelana Nokushisa Okuphansi Nosayizi Omncane kanye Nephrofayela Ephansi engu-1.07 mm
• 100 % UIS kanye ne-Rg Ihloliwe
• I-Active Clamp ku-Intermediate DC/DC Power Supplies
