SI7461DP-T1-GE3 MOSFET -60V Vds 20V Vgs PowerPAK SO-8
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | Vishay |
| Isigaba somkhiqizo: | I-MOSFET |
| I-RoHS: | Imininingwane |
| Ubuchwepheshe: | Si |
| Isitayela Sokukhweza: | I-SMD/SMT |
| Iphakheji/Ikesi: | I-SOIC-8 |
| I-Transistor Polarity: | Isiteshi se-P |
| Inombolo Yeziteshi: | Isiteshi esingu-1 |
| I-Vds - I-Drain-Source Breakdown Voltage: | 30 v |
| I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 5.7 A |
| I-Rds On - I-Drain-Source Resistance: | 42 mhm |
| I-Vgs - I-Gate-Source Voltage: | - 10 V, + 10 V |
| I-Vgs th - I-Gate-Source Threshold Voltage: | 1 V |
| Qg - Ukukhokhiswa kwesango: | 24 nc |
| Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
| Izinga Lokushisa Eziphezulu Ezisebenzayo: | + 150 C |
| I-Pd - Ukuchithwa kwamandla: | 2.5 W |
| Imodi yesiteshi: | Ukuthuthukisa |
| Igama lokuhweba: | I-TrenchFET |
| Ukupakishwa: | I-reel |
| Ukupakishwa: | Sika Tape |
| Ukupakishwa: | I-MouseReel |
| Ibhrendi: | I-Vishay Semiconductors |
| Ukucushwa: | Awushadile |
| Isikhathi sokuwa: | 30 ns |
| I-Transconductance Phambili - Min: | 13 S |
| Uhlobo Lomkhiqizo: | I-MOSFET |
| Isikhathi Sokuvuka: | awu 42ns |
| Uchungechunge: | SI9 |
| Inani Lephakethe Lefekthri: | 2500 |
| Isigaba esingaphansi: | Ama-MOSFET |
| Uhlobo lwe-Transistor: | 1 P-Channel |
| Isikhathi Esijwayelekile Sokubambezeleka Kokuvala: | 30 ns |
| Isikhathi Sokubambezeleka Kokuvula Okujwayelekile: | 14 ns |
| Ingxenye # Iziteketiso: | I-SI9435BDY-E3 |
| Isisindo Seyunithi: | 750 mg |
• TrenchFET® amandla MOSFETs
• Iphakheji ye-PowerPAK® yokumelana nokushisa okuphansi enephrofayiliEC engu-1.07 mm ephansi
