I-SI9945BDY-T1-GE3 MOSFET 60V Vds 20V Vgs SO-8
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | Vishay |
| Isigaba somkhiqizo: | I-MOSFET |
| I-RoHS: | Imininingwane |
| Ubuchwepheshe: | Si |
| Isitayela Sokukhweza: | I-SMD/SMT |
| Iphakheji/Ikesi: | I-SOIC-8 |
| I-Transistor Polarity: | Isiteshi se-N |
| Inombolo Yeziteshi: | 2 Isiteshi |
| I-Vds - I-Drain-Source Breakdown Voltage: | 60v |
| I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 5.3 A |
| I-Rds On - I-Drain-Source Resistance: | 58 mhm |
| I-Vgs - I-Gate-Source Voltage: | - 20 V, + 20 V |
| I-Vgs th - I-Gate-Source Threshold Voltage: | 1 V |
| Qg - Ukukhokhiswa kwesango: | 13 nc |
| Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
| Izinga Lokushisa Eziphezulu Ezisebenzayo: | + 150 C |
| I-Pd - Ukuchithwa kwamandla: | 3.1 W |
| Imodi yesiteshi: | Ukuthuthukisa |
| Igama lokuhweba: | I-TrenchFET |
| Ukupakishwa: | I-reel |
| Ukupakishwa: | Sika Tape |
| Ukupakishwa: | I-MouseReel |
| Ibhrendi: | I-Vishay Semiconductors |
| Ukucushwa: | Okukabili |
| Isikhathi sokuwa: | 10 ns |
| I-Transconductance Phambili - Min: | 15 S |
| Uhlobo Lomkhiqizo: | I-MOSFET |
| Isikhathi Sokuvuka: | 15 ns, 65 n |
| Uchungechunge: | SI9 |
| Inani Lephakethe Lefekthri: | 2500 |
| Isigaba esingaphansi: | Ama-MOSFET |
| Uhlobo lwe-Transistor: | 2 Isiteshi se-N |
| Isikhathi Esijwayelekile Sokubambezeleka Kokuvala: | 10 ns, 15 ns |
| Isikhathi Sokubambezeleka Kokuvula Okujwayelekile: | 15 ns, 20 ns |
| Ingxenye # Iziteketiso: | I-SI9945BDY-GE3 |
| Isisindo Seyunithi: | 750 mg |
• TrenchFET® amandla MOSFET
• I-inverter ye-LCD TV CCFL
• Iswishi yokulayisha
