I-SIA427ADJ-T1-GE3 MOSFET -8V Vds 5V Vgs PowerPAK SC-70
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | Vishay |
| Isigaba somkhiqizo: | I-MOSFET |
| I-RoHS: | Imininingwane |
| Ubuchwepheshe: | Si |
| Isitayela Sokukhweza: | I-SMD/SMT |
| Iphakheji/Ikesi: | SC-70-6 |
| I-Transistor Polarity: | Isiteshi se-P |
| Inombolo Yeziteshi: | Isiteshi esingu-1 |
| I-Vds - I-Drain-Source Breakdown Voltage: | 8v |
| I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 12 A |
| I-Rds On - I-Drain-Source Resistance: | 95 mhm |
| I-Vgs - I-Gate-Source Voltage: | - 5 V, + 5 V |
| I-Vgs th - I-Gate-Source Threshold Voltage: | 800 mV |
| Qg - Ukukhokhiswa kwesango: | 50 nc |
| Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
| Izinga Lokushisa Eziphezulu Ezisebenzayo: | + 150 C |
| I-Pd - Ukuchithwa kwamandla: | 19 W |
| Imodi yesiteshi: | Ukuthuthukisa |
| Igama lokuhweba: | I-TrenchFET |
| Ukupakishwa: | I-reel |
| Ukupakishwa: | Sika Tape |
| Ukupakishwa: | I-MouseReel |
| Ibhrendi: | I-Vishay Semiconductors |
| Ukucushwa: | Awushadile |
| Uhlobo Lomkhiqizo: | I-MOSFET |
| Uchungechunge: | I-SIA |
| Inani Lephakethe Lefekthri: | 3000 |
| Isigaba esingaphansi: | Ama-MOSFET |
| Isisindo Seyunithi: | 82.330 mg |
• TrenchFET® amandla MOSFET
• Iphakheji ye-PowerPAK® SC-70 ethuthukiswe ngokushisa
-Indawo encane yezinyawo
– Ukumelana okuphansi
• 100 % Rg ihloliwe
• Iswishi yokulayisha, yelayini yamandla engu-1.2 V yamadivayisi aphathekayo naphathwa ngesandla
