I-SQJ951EP-T1_GE3 I-MOSFET Dual P-Channel 30V AEC-Q101 Ifanelekile
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | Vishay |
| Isigaba somkhiqizo: | I-MOSFET |
| Ubuchwepheshe: | Si |
| Isitayela Sokukhweza: | I-SMD/SMT |
| Iphakheji / Ikesi: | I-PowerPAK-SO-8-4 |
| I-Transistor Polarity: | Isiteshi se-P |
| Inombolo Yeziteshi: | 2 Isiteshi |
| I-Vds - I-Drain-Source Breakdown Voltage: | 30 v |
| I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 30 A |
| I-Rds On - I-Drain-Source Resistance: | 14 mhm |
| I-Vgs - I-Gate-Source Voltage: | - 20 V, + 20 V |
| I-Vgs th - I-Gate-Source Threshold Voltage: | 2.5 V |
| Qg - Ukukhokhiswa kwesango: | 50 nc |
| Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
| Ubukhulu Bezinga Lokushisa Lokusebenza: | + 175 C |
| I-Pd - Ukuchithwa kwamandla: | 56 w |
| Imodi yesiteshi: | Ukuthuthukisa |
| Ukufaneleka: | I-AEC-Q101 |
| Igama lokuhweba: | I-TrenchFET |
| Ukupakishwa: | I-reel |
| Ukupakishwa: | Sika Tape |
| Ukupakishwa: | I-MouseReel |
| Ibhrendi: | I-Vishay Semiconductors |
| Ukucushwa: | Okukabili |
| Isikhathi sokuwa: | 28ns |
| Uhlobo Lomkhiqizo: | I-MOSFET |
| Isikhathi Sokuvuka: | 12 ns |
| Uchungechunge: | SQ |
| Inani Lephakethe Lefekthri: | 3000 |
| Isigaba esingaphansi: | Ama-MOSFET |
| Uhlobo lwe-Transistor: | 2 Isiteshi se-P |
| Isikhathi Esijwayelekile Sokubambezeleka Kokuvala: | awu 39ns |
| Isikhathi Sokubambezeleka Kokuvula Okujwayelekile: | 12 ns |
| Ingxenye # Iziteketiso: | I-SQJ951EP-T1_BE3 |
| Isisindo Seyunithi: | 0.017870 oz |
• I-Halogen-free Ngokusho kwe-IEC 61249-2-21 Incazelo
• I-TrenchFET® Power MOSFET
• I-AEC-Q101 Ifanelekile
• 100 % Rg kanye ne-UIS Ihlolwe
• Ihambisana ne-RoHS Directive 2002/95/EC
