SQM50034EL_GE3 MOSFET N-CHANNEL 60-V (DS) 175C MOSFET
♠ Incazelo Yomkhiqizo
Isibaluli Somkhiqizo | Isibaluli senani |
Umkhiqizi: | Vishay |
Isigaba somkhiqizo: | I-MOSFET |
I-RoHS: | Imininingwane |
Ubuchwepheshe: | Si |
Isitayela Sokukhweza: | I-SMD/SMT |
Iphakheji / Ikesi: | KUYA-263-3 |
I-Transistor Polarity: | Isiteshi se-N |
Inombolo Yeziteshi: | Isiteshi esingu-1 |
I-Vds - I-Drain-Source Breakdown Voltage: | 60v |
I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 100 A |
I-Rds On - I-Drain-Source Resistance: | 3.2 mOhm |
I-Vgs - I-Gate-Source Voltage: | - 20 V, + 20 V |
I-Vgs th - I-Gate-Source Threshold Voltage: | 2 V |
Qg - Ukukhokhiswa kwesango: | 60 nc |
Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
Ubukhulu Bezinga Lokushisa Lokusebenza: | + 175 C |
I-Pd - Ukuchithwa kwamandla: | 150 W |
Imodi yesiteshi: | Ukuthuthukisa |
Igama lokuhweba: | I-TrenchFET |
Ibhrendi: | Vishay / Siliconix |
Ukucushwa: | Awushadile |
Isikhathi sokuwa: | 7 ngi |
Uhlobo Lomkhiqizo: | I-MOSFET |
Isikhathi Sokuvuka: | 7 ngi |
Uchungechunge: | SQ |
Inani Lephakethe Lefekthri: | 800 |
Isigaba esingaphansi: | Ama-MOSFET |
Isikhathi Esijwayelekile Sokubambezeleka Kokuvala: | awu 33ns |
Isikhathi Sokubambezeleka Kokuvula Okujwayelekile: | 15 ns |
Isisindo Seyunithi: | 0.139332 oz |
• TrenchFET® amandla MOSFET
• Iphakheji enokumelana okuphansi kokushisa
• I-100 % Rg ne-UIS ihloliwe
• I-AEC-Q101 ifanelekile