FDD4N60NZ MOSFET 2.5A Okukhipha Yamanje I-GateDrive Optocopler

Abakhiqizi: KU-Semiconductor

Isigaba somkhiqizo: Ama-Transistors - ama-FET, ama-MOSFET - Awodwa

Ishidi le-data:I-FDD4N60NZ

Incazelo: MOSFET N CH 600V 3.4A DPAK

Isimo se-RoHS: Iyahambisana ne-RoHS

Imininingwane Yomkhiqizo

Isibaluli Somkhiqizo	Isibaluli senani
Umkhiqizi:	wonke
Isigaba somkhiqizo:	I-MOSFET
I-RoHS:	Imininingwane
Ubuchwepheshe:	Si
Isitayela Sokukhweza:	I-SMD/SMT
Iphakheji / Ikesi:	I-DPAK-3
I-Transistor Polarity:	Isiteshi se-N
Inombolo Yeziteshi:	Isiteshi esingu-1
I-Vds - I-Drain-Source Breakdown Voltage:	600 V
I-Id - Ukudonsa Okuqhubekayo Kwamanje:	1.7 A
I-Rds On - I-Drain-Source Resistance:	1.9 ohm
I-Vgs - I-Gate-Source Voltage:	- 25 V, + 25 V
I-Vgs th - I-Gate-Source Threshold Voltage:	5 V
Qg - Ukukhokhiswa kwesango:	8.3 nC
Izinga Lokushisa Eliphansi Lokusebenza:	- 55 C
Ubukhulu Bezinga Lokushisa Lokusebenza:	+ 150 C
I-Pd - Ukuchithwa kwamandla:	114 W
Imodi yesiteshi:	Ukuthuthukisa
Igama lokuhweba:	I-UniFET
Ukupakishwa:	I-reel
Ukupakishwa:	Sika Tape
Ukupakishwa:	I-MouseReel
Ibhrendi:	ukuqala / Fairchild
Ukucushwa:	Awushadile
Isikhathi sokuwa:	12.8 ns
I-Transconductance Phambili - Min:	3.4 S
Ubude:	2.39 mm
Ubude:	6.73 mm
Umkhiqizo:	I-MOSFET
Uhlobo Lomkhiqizo:	I-MOSFET
Isikhathi Sokuvuka:	15.1 ns
Uchungechunge:	I-FDD4N60NZ
Inani Lephakethe Lefekthri:	2500
Isigaba esingaphansi:	Ama-MOSFET
Uhlobo lwe-Transistor:	1 Isiteshi se-N
Isikhathi Esijwayelekile Sokubambezeleka Kokuvala:	30.2 ns
Isikhathi Sokubambezeleka Kokuvula Okujwayelekile:	12.7 ns
Ububanzi:	6.22 mm
Isisindo Seyunithi:	0.011640 oz