I-IKW50N65EH5XKSA1 IGBT Transistors INDUSTRY 14
♠ Incazelo Yomkhiqizo
| Isibaluli Somkhiqizo | Isibaluli senani |
| Umkhiqizi: | I-Infineon |
| Isigaba somkhiqizo: | I-IGBT Transistors |
| Ubuchwepheshe: | Si |
| Iphakheji / Ikesi: | KUYA-247-3 |
| Isitayela Sokukhweza: | NgeHole |
| Ukucushwa: | Awushadile |
| Umqoqi- Emitter Voltage VCEO Max: | 650v |
| I-Collector-Emitter Saturation Voltage: | 1.65 V |
| I-Maximum Gate Emitter Voltage: | 20 V |
| Umqoqi Oqhubekayo wamanje ku-25 C: | 80 A |
| I-Pd - Ukuchithwa kwamandla: | 275W |
| Izinga Lokushisa Eliphansi Lokusebenza: | - 40 C |
| Ubukhulu Bezinga Lokushisa Lokusebenza: | + 175 C |
| Uchungechunge: | I-Trenchstop IGBT5 |
| Ukupakishwa: | Ithubhu |
| Ibhrendi: | I-Infineon Technologies |
| I-Gate-Emitter Leakage Yamanje: | 100 nA |
| Ubude: | 20.7 mm |
| Ubude: | 15.87 mm |
| Uhlobo Lomkhiqizo: | I-IGBT Transistors |
| Inani Lephakethe Lefekthri: | 240 |
| Isigaba esingaphansi: | I-IGBTs |
| Igama lokuhweba: | I-TRENCHSTOP |
| Ububanzi: | 5.31 mm |
| Ingxenye # Iziteketiso: | I-IKW50N65EH5 SP001257944 |
| Isisindo Seyunithi: | 0.213383 oz |
Ukunikezwa kwe-HighspeedH5technology
•I-Best-in-Classefficiency in hardswitchingand resonant topologies
•I-Plugandplay esikhundleni se-IGBTs yesizukulwane sangaphambili
•650Vbreakdownvoltage
•LowgatechargeQG
•IGBTcopacked-full-ratedRAPID1fastandsoftantiparallel diode
•Izinga lokushisa eliphezulu elingu-175°C
•Kufanelekile ngokuya ngeJEDECfortargetapplications
•Pb-freeleadplating;I-RoHS iyahambisana
•I-CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
•Ukunikezwa kwamandla angaphazamiseki
•Iziguquli zelanga
•Iziguquli zokushisela
•Midtohighrangeswitchingfrequencyconverters
