I-IKW75N65EH5XKSA1 IGBT Transistors INDUSTRY 14

Incazelo emfushane:

Abakhiqizi: I-Infineon Technologies
Isigaba somkhiqizo: Ama-Transistors – IGBTs – Single
Ishidi le-data:I-IKW75N65EH5XKSA1
Incazelo: IGBT TRENCH 650V 90A TO247-3
Isimo se-RoHS: Iyahambisana ne-RoHS


Imininingwane Yomkhiqizo

Izici

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♠ Incazelo Yomkhiqizo

Isibaluli Somkhiqizo Isibaluli senani
Umkhiqizi: I-Infineon
Isigaba somkhiqizo: I-IGBT Transistors
Ubuchwepheshe: Si
Iphakheji / Ikesi: KUYA-247-3
Isitayela Sokukhweza: NgeHole
Ukucushwa: Awushadile
Umqoqi- Emitter Voltage VCEO Max: 650v
I-Collector-Emitter Saturation Voltage: 1.65 V
I-Maximum Gate Emitter Voltage: 20 V
Umqoqi Oqhubekayo wamanje ku-25 C: 90 A
I-Pd - Ukuchithwa kwamandla: 395W
Izinga Lokushisa Eliphansi Lokusebenza: - 40 C
Ubukhulu Bezinga Lokushisa Lokusebenza: + 175 C
Uchungechunge: I-Trenchstop IGBT5
Ukupakishwa: Ithubhu
Ibhrendi: I-Infineon Technologies
I-Gate-Emitter Leakage Yamanje: 100 nA
Ubude: 20.7 mm
Ubude: 15.87 mm
Uhlobo Lomkhiqizo: I-IGBT Transistors
Inani Lephakethe Lefekthri: 240
Isigaba esingaphansi: I-IGBTs
Igama lokuhweba: I-TRENCHSTOP
Ububanzi: 5.31 mm
Ingxenye # Iziteketiso: I-IKW75N65EH5 SP001257948
Isisindo Seyunithi: 0.211644 oz

 


  • Okwedlule:
  • Olandelayo:

  • Ukunikezwa kwe-HighspeedH5technology
    •I-Best-in-Classefficiency in hardswitchingand resonant topologies
    •I-Plugandplay esikhundleni se-IGBTs yesizukulwane sangaphambili
    •650Vbreakdownvoltage
    •LowgatechargeQG
    •IGBTcopacked-full-ratedRAPID1fastandsoftantiparallel diode
    •Izinga lokushisa eliphezulu elingu-175°C
    •Kufanelekile ngokuya ngeJEDECfortargetapplications
    •Pb-freeleadplating;I-RoHS iyahambisana
    •I-CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/

    •Ukunikezwa kwamandla angaphazamiseki
    •Iziguquli zelanga
    •Iziguquli zokushisela
    •Midtohighrangeswitchingfrequencyconverters

    Imikhiqizo Ehlobene