I-MBT3904DW1T1G Ama-Bipolar Transistors – BJT 200mA 60V Dual NPN
♠ Incazelo Yomkhiqizo
Isibaluli Somkhiqizo | Isibaluli senani |
Umkhiqizi: | wonke |
Isigaba somkhiqizo: | Ama-Bipolar Transistors - BJT |
I-RoHS: | Imininingwane |
Isitayela Sokukhweza: | I-SMD/SMT |
Iphakheji / Ikesi: | SC-70-6 |
I-Transistor Polarity: | I-NPN |
Ukucushwa: | Okukabili |
Umqoqi- Emitter Voltage VCEO Max: | 40 v |
I-Collector- Base Voltage VCBO: | 60v |
I-Emitter- Base Voltage VEBO: | 6 V |
I-Collector-Emitter Saturation Voltage: | 300 mV |
Isilinganiso esiphezulu se-DC Collector yamanje: | 200 mA |
I-Pd - Ukuchithwa kwamandla: | 150 mW |
Thola Umkhawulokudonsa womkhiqizo fT: | 300 MHz |
Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
Ubukhulu Bezinga Lokushisa Lokusebenza: | + 150 C |
Uchungechunge: | I-MBT3904DW1 |
Ukupakishwa: | I-reel |
Ukupakishwa: | Sika Tape |
Ukupakishwa: | I-MouseReel |
Ibhrendi: | wonke |
Umqoqi Oqhubekayo wamanje: | - 2 A |
I-DC Collector/Base Gain hfe Min: | 40 |
Ubude: | 0.9 mm |
Ubude: | 2 mm |
Uhlobo Lomkhiqizo: | Ama-BJT - Ama-Bipolar Transistors |
Inani Lephakethe Lefekthri: | 3000 |
Isigaba esingaphansi: | Ama-Transistors |
Ubuchwepheshe: | Si |
Ububanzi: | 1.25 mm |
Ingxenye # Iziteketiso: | I-MBT3904DW1T3G |
Isisindo Seyunithi: | 0.000988 oz |
• hFE, 100−300 • I-VCE ephansi(yahlala), ≤ 0.4 V
• Yenza lula i-Circuit Design
• Yehlisa Isikhala Sebhodi
• Yehlisa Ukubalwa Kwengxenye
• Itholakala ngo-8 mm, 7−inch/3,000 Unit Tape kanye ne-Reel
• Isiqalo se-S kanye ne-NSV Sezezimoto Nezinye Izinhlelo Ezidinga Izidingo Eziyingqayizivele Zesayithi Nokulawula Ushintsho;I-AEC−Q101 Ifanelekile kanye ne-PPAP Iyakwazi
• Lawa madivayisi a-Pb−Amahhala, Amahhala we-Halogen/BFR futhi Ayathobelana ne-RoHS