I-MBT3904DW1T1G Ama-Bipolar Transistors – BJT 200mA 60V Dual NPN

Incazelo emfushane:

Abakhiqizi: KU-Semiconductor

Isigaba somkhiqizo: Ama-Transistors – Bipolar (BJT) – Ama-Arrays

Ishidi le-data:I-MBT3904DW1T1G

Incazelo: TRANS 2NPN 40V 0.2A SC88

Isimo se-RoHS: Iyahambisana ne-RoHS


Imininingwane Yomkhiqizo

Izici

Omaka bomkhiqizo

♠ Incazelo Yomkhiqizo

Isibaluli Somkhiqizo Isibaluli senani
Umkhiqizi: wonke
Isigaba somkhiqizo: Ama-Bipolar Transistors - BJT
I-RoHS: Imininingwane
Isitayela Sokukhweza: I-SMD/SMT
Iphakheji / Ikesi: SC-70-6
I-Transistor Polarity: I-NPN
Ukucushwa: Okukabili
Umqoqi- Emitter Voltage VCEO Max: 40 v
I-Collector- Base Voltage VCBO: 60v
I-Emitter- Base Voltage VEBO: 6 V
I-Collector-Emitter Saturation Voltage: 300 mV
Isilinganiso esiphezulu se-DC Collector yamanje: 200 mA
I-Pd - Ukuchithwa kwamandla: 150 mW
Thola Umkhawulokudonsa womkhiqizo fT: 300 MHz
Izinga Lokushisa Eliphansi Lokusebenza: - 55 C
Ubukhulu Bezinga Lokushisa Lokusebenza: + 150 C
Uchungechunge: I-MBT3904DW1
Ukupakishwa: I-reel
Ukupakishwa: Sika Tape
Ukupakishwa: I-MouseReel
Ibhrendi: wonke
Umqoqi Oqhubekayo wamanje: - 2 A
I-DC Collector/Base Gain hfe Min: 40
Ubude: 0.9 mm
Ubude: 2 mm
Uhlobo Lomkhiqizo: Ama-BJT - Ama-Bipolar Transistors
Inani Lephakethe Lefekthri: 3000
Isigaba esingaphansi: Ama-Transistors
Ubuchwepheshe: Si
Ububanzi: 1.25 mm
Ingxenye # Iziteketiso: I-MBT3904DW1T3G
Isisindo Seyunithi: 0.000988 oz

  • Okwedlule:
  • Olandelayo:

  • • hFE, 100−300 • I-VCE ephansi(yahlala), ≤ 0.4 V

    • Yenza lula i-Circuit Design

    • Yehlisa Isikhala Sebhodi

    • Yehlisa Ukubalwa Kwengxenye

    • Itholakala ngo-8 mm, 7−inch/3,000 Unit Tape kanye ne-Reel

    • Isiqalo se-S kanye ne-NSV Sezezimoto Nezinye Izinhlelo Ezidinga Izidingo Eziyingqayizivele Zesayithi Nokulawula Ushintsho;I-AEC−Q101 Ifanelekile kanye ne-PPAP Iyakwazi

    • Lawa madivayisi a-Pb−Amahhala, Amahhala we-Halogen/BFR futhi Ayathobelana ne-RoHS

    Imikhiqizo Ehlobene