Uhlobo olusha lwe-hafnium-based ferroelectric memory chip olwakhiwe futhi lwaklanywa u-Liu Ming, Isazi Sezemfundo Se-Institute of Microelectronics, lwethulwe ku-IEEE International Solid-State Circuits Conference (ISSCC) ngo-2023, izinga eliphakeme kakhulu lokuklanywa kwesekethe ehlanganisiwe.
Inkumbulo eshumekiwe esezingeni eliphezulu engaguquki (i-eNVM) idingeka kakhulu kuma-SOC chips ku-electronics abathengi, izimoto ezizimele, ukulawula kwemboni kanye namadivayisi asemaphethelweni e-inthanethi Yezinto. Inkumbulo ye-Ferroelectric (FeRAM) inezinzuzo zokuthembeka okuphezulu, ukusetshenziswa kwamandla aphansi kakhulu, kanye nesivinini esikhulu. Isetshenziswa kabanzi enanini elikhulu lokuqoshwa kwedatha ngesikhathi sangempela, ukufunda nokubhala idatha njalo, ukusetshenziswa kwamandla okuphansi kanye nemikhiqizo eshumekiwe ye-SoC/SiP. Inkumbulo ye-Ferroelectric esekelwe ezintweni ze-PZT iye yazuza ukukhiqizwa okukhulu, kodwa izinto zayo azihambisani nobuchwepheshe be-CMOS futhi kunzima ukushwabana, okuholela enqubweni yokuthuthukiswa kwenkumbulo yendabuko ye-ferroelectric ivinjelwa sina, futhi ukuhlanganiswa okushunyekiwe kudinga ukwesekwa komugqa wokukhiqiza okuhlukile, okunzima ukumemezela ngezinga elikhulu. I-miniaturability encane yenkumbulo entsha ye-ferroelectric esekelwe ku-hafnium kanye nokuhambisana kwayo nobuchwepheshe be-CMOS kuyenza ibe isizinda socwaningo esikhathaza kakhulu ezemfundo nezimboni. Inkumbulo ye-ferroelectric esekwe ku-Hafnium ithathwe njengesiqondiso esibalulekile sokuthuthukiswa kwesizukulwane esilandelayo senkumbulo entsha. Njengamanje, ucwaningo lwenkumbulo ye-ferroelectric esekwe ku-hafnium kusenezinkinga ezifana nokwethenjwa kweyunithi enganele, ukushoda kwedizayini ye-chip enomjikelezo ophelele we-peripheral, nokuqinisekiswa okwengeziwe kokusebenza kwezinga le-chip, okukhawulela ukusetshenziswa kwayo ku-eNVM.
Lihlose izinselele ezibhekene nenkumbulo eshumekiwe ye-ferroelectric esekelwe ku-hafnium, ithimba lika-Academician uLiu Ming ovela ku-Institute of Microelectronics liklame futhi lasebenzisa i-FeRAM test chip ye-megab-magnitude okokuqala ngqa emhlabeni ngokusekelwe kuplathifomu enkulu yokuhlanganisa ye-hafnium-based ferroelectric memory ehambisana nokuhlanganiswa kwe-HMOS ferroelectric ne-HMOS. i-capacitor kunqubo ye-CMOS engu-130nm. Kuhlongozwa isekethe yedrayivu yokubhala esizwa yi-ECC yokuzwa izinga lokushisa kanye nesekethe ye-amplifier ebucayi ukuze kuqedwe i-offset ezenzakalelayo kuyaphakanyiswa, futhi ukuqina komjikelezo we-1012 kanye nokubhala okungu-7ns nesikhathi sokufunda esingu-5ns kuyafinyelelwa, okungamazinga angcono kakhulu okubikiwe kuze kube manje.
Iphepha elithi “I-FeRAM Eshumekiwe engu-9-Mb HZO eno-1012-Cycle Endurance kanye ne-5/7ns Read/Write usebenzisa i-ECC-Assisted Data Refresh” lisekelwe emiphumeleni futhi i-Offset-Canceled Sense Amplifier “yakhethwa ku-ISSCC 2023, futhi i-chip yakhethwa engqungqutheleni ye-ISSCC ukuze ikhishwe kuqala i-Demo Sense. umbhali wephepha, futhi uLiu Ming ungumbhali ohambisanayo.
Umsebenzi ohlobene usekelwa iNational Natural Science Foundation yaseChina, uHlelo Lukazwelonke Oluyinhloko Lokucwaninga Nokuthuthukiswa Lomnyango Wesayensi Nobuchwepheshe, kanye Nomklamo Wokuhlola I-B-Class we-Chinese Academy of Sciences.
(Isithombe se-9Mb Hafnium-based FeRAM chip nokuhlolwa kokusebenza kwe-chip)
Isikhathi sokuthumela: Apr-15-2023
