Uhlobo olusha lwe-hafnium-based ferroelectric memory chip olwakhiwe futhi lwaklanywa u-Liu Ming, Isazi Sezemfundo Se-Institute of Microelectronics, lwethulwe ku-IEEE International Solid-State Circuits Conference (ISSCC) ngo-2023, izinga eliphakeme kakhulu lokuklanywa kwesekethe ehlanganisiwe.
Inkumbulo eshumekiwe esezingeni eliphezulu engaguquki (i-eNVM) idingeka kakhulu kuma-SOC chips ku-electronics abathengi, izimoto ezizimele, ukulawula kwemboni kanye namadivayisi asemaphethelweni e-inthanethi Yezinto.Inkumbulo ye-Ferroelectric (FeRAM) inezinzuzo zokuthembeka okuphezulu, ukusetshenziswa kwamandla aphansi kakhulu, kanye nesivinini esikhulu.Isetshenziswa kabanzi enanini elikhulu lokuqoshwa kwedatha ngesikhathi sangempela, ukufunda nokubhala idatha njalo, ukusetshenziswa kwamandla okuphansi kanye nemikhiqizo eshumekiwe ye-SoC/SiP.Inkumbulo ye-Ferroelectric esekelwe ezintweni ze-PZT izuze ukukhiqizwa okukhulu, kodwa impahla yayo ayihambelani nobuchwepheshe be-CMOS futhi kunzima ukushwabana, okuholela ekuthuthukisweni kwenkumbulo yendabuko ye-ferroelectric ivinjelwa sina, futhi ukuhlanganiswa okushunyekiwe kudinga ukwesekwa komugqa wokukhiqiza okuhlukile, okunzima ukukumemezela. ngezinga elikhulu.I-miniaturability encane yenkumbulo entsha ye-ferroelectric esekelwe ku-hafnium kanye nokuhambisana kwayo nobuchwepheshe be-CMOS kuyenza ibe isizinda socwaningo esikhathaza kakhulu ezemfundo nezimboni.Inkumbulo ye-ferroelectric esekwe ku-Hafnium ithathwe njengesiqondiso esibalulekile sokuthuthukiswa kwesizukulwane esilandelayo senkumbulo entsha.Njengamanje, ucwaningo lwenkumbulo ye-ferroelectric esekwe ku-hafnium kusenezinkinga ezifana nokwethenjwa kweyunithi enganele, ukushoda kwedizayini ye-chip enomjikelezo ophelele we-peripheral, nokuqinisekiswa okwengeziwe kokusebenza kwezinga le-chip, okukhawulela ukusetshenziswa kwayo ku-eNVM.
Lihlose izinselele ezibhekene nenkumbulo eshumekiwe ye-ferroelectric esekelwe ku-hafnium, ithimba le-Academician Liu Ming elivela ku-Institute of Microelectronics liklame futhi lasebenzisa i-chip yokuhlola ye-FeRAM ye-megab-magnitude okokuqala ngqa emhlabeni ngokusekelwe kuplathifomu yokuhlanganisa enkulu. yenkumbulo ye-ferroelectric esekwe ku-hafnium ehambisana ne-CMOS, futhi yaqeda ngempumelelo ukuhlanganiswa kwesilinganiso esikhulu se-HZO ferroelectric capacitor kunqubo ye-130nm CMOS.Kuhlongozwa isekethe yedrayivu yokubhala esizwa yi-ECC yokuzwa izinga lokushisa kanye nesekethe ye-amplifier ebucayi ukuze kuqedwe i-offset ezenzakalelayo kuyaphakanyiswa, futhi ukuqina komjikelezo we-1012 kanye nokubhala okungu-7ns nesikhathi sokufunda esingu-5ns kuyafinyelelwa, okungamazinga angcono kakhulu okubikiwe kuze kube manje.
Iphepha elithi “A 9-Mb HZO-based Embedded FeRAM eno-1012-Cycle Endurance kanye ne-5/7ns Read/Write usebenzisa i-ECC-Assisted Data Refresh” lisekelwe emiphumeleni futhi i-Offset-Canceled Sense Amplifier “yakhethwa ku-ISSCC 2023, futhi i-chip ikhethiwe Kuseshini Yedemo ye-ISSCC ezoboniswa engqungqutheleni.U-Yang Jianguo ungumbhali wokuqala wephepha, kanti uLiu Ming ungumbhali ohambisana naye.
Umsebenzi ohlobene usekelwa iNational Natural Science Foundation yaseChina, uHlelo Lukazwelonke Oluyinhloko Lokucwaninga Nokuthuthukiswa Lomnyango Wesayensi Nobuchwepheshe, kanye Nomklamo Wokuhlola I-B-Class we-Chinese Academy of Sciences.
(Isithombe se-9Mb Hafnium-based FeRAM chip nokuhlolwa kokusebenza kwe-chip)
Isikhathi sokuthumela: Apr-15-2023