SUD19P06-60-GE3 MOSFET 60V 19A 38.5W 60mohm @ 10V
♠ Incazelo Yomkhiqizo
Isibaluli Somkhiqizo | Isibaluli senani |
Umkhiqizi: | Vishay |
Isigaba somkhiqizo: | I-MOSFET |
Ubuchwepheshe: | Si |
Isitayela Sokukhweza: | I-SMD/SMT |
Iphakheji / Ikesi: | KUYA-252-3 |
I-Transistor Polarity: | Isiteshi se-P |
Inombolo Yeziteshi: | Isiteshi esingu-1 |
I-Vds - I-Drain-Source Breakdown Voltage: | 60v |
I-Id - Ukudonsa Okuqhubekayo Kwamanje: | 50 A |
I-Rds On - I-Drain-Source Resistance: | 60 mhm |
I-Vgs - I-Gate-Source Voltage: | - 20 V, + 20 V |
I-Vgs th - I-Gate-Source Threshold Voltage: | 3 V |
Qg - Ukukhokhiswa kwesango: | 40 nc |
Izinga Lokushisa Eliphansi Lokusebenza: | - 55 C |
Ubukhulu Bezinga Lokushisa Lokusebenza: | + 150 C |
I-Pd - Ukuchithwa kwamandla: | 113 W |
Imodi yesiteshi: | Ukuthuthukisa |
Igama lokuhweba: | I-TrenchFET |
Ukupakishwa: | I-reel |
Ukupakishwa: | Sika Tape |
Ukupakishwa: | I-MouseReel |
Ibhrendi: | I-Vishay Semiconductors |
Ukucushwa: | Awushadile |
Isikhathi sokuwa: | 30 ns |
I-Transconductance Phambili - Min: | 22 S |
Uhlobo Lomkhiqizo: | I-MOSFET |
Isikhathi Sokuvuka: | 9 ngi |
Uchungechunge: | I-SUD |
Inani Lephakethe Lefekthri: | 2000 |
Isigaba esingaphansi: | Ama-MOSFET |
Uhlobo lwe-Transistor: | 1 P-Channel |
Isikhathi Esijwayelekile Sokubambezeleka Kokuvala: | awu 65ns |
Isikhathi Sokubambezeleka Kokuvula Okujwayelekile: | 8ns |
Ingxenye # Iziteketiso: | I-SUD19P06-60-BE3 |
Isisindo Seyunithi: | 0.011640 oz |
• I-Halogen-free Ngokusho kwe-IEC 61249-2-21 Incazelo
• I-TrenchFET® Power MOSFET
• Ihlolwe i-UIS engu-100%.
• Ihambisana ne-RoHS Directive 2002/95/EC
• I-High Side Switch ye-Full Bridge Converter
• I-DC/DC Converter yesibonisi se-LCD