SUD19P06-60-GE3 MOSFET 60V 19A 38.5W 60mohm @ 10V

Incazelo emfushane:

Abakhiqizi: Vishay / Siliconix

Isigaba somkhiqizo: Ama-Transistors - ama-FET, ama-MOSFET - Awodwa

Ishidi le-data: I-SUD19P06-60-GE3

Incazelo:MOSFET P-CH 60V 18.3A TO-252

Isimo se-RoHS:Ithobelana ne-RoHS


Imininingwane Yomkhiqizo

Izici

Izinhlelo zokusebenza

Omaka bomkhiqizo

♠ Incazelo Yomkhiqizo

Isibaluli Somkhiqizo Isibaluli senani
Umkhiqizi: Vishay
Isigaba somkhiqizo: I-MOSFET
Ubuchwepheshe: Si
Isitayela Sokukhweza: I-SMD/SMT
Iphakheji / Ikesi: KUYA-252-3
I-Transistor Polarity: Isiteshi se-P
Inombolo Yeziteshi: Isiteshi esingu-1
I-Vds - I-Drain-Source Breakdown Voltage: 60v
I-Id - Ukudonsa Okuqhubekayo Kwamanje: 50 A
I-Rds On - I-Drain-Source Resistance: 60 mhm
I-Vgs - I-Gate-Source Voltage: - 20 V, + 20 V
I-Vgs th - I-Gate-Source Threshold Voltage: 3 V
Qg - Ukukhokhiswa kwesango: 40 nc
Izinga Lokushisa Eliphansi Lokusebenza: - 55 C
Ubukhulu Bezinga Lokushisa Lokusebenza: + 150 C
I-Pd - Ukuchithwa kwamandla: 113 W
Imodi yesiteshi: Ukuthuthukisa
Igama lokuhweba: I-TrenchFET
Ukupakishwa: I-reel
Ukupakishwa: Sika Tape
Ukupakishwa: I-MouseReel
Ibhrendi: I-Vishay Semiconductors
Ukucushwa: Awushadile
Isikhathi sokuwa: 30 ns
I-Transconductance Phambili - Min: 22 S
Uhlobo Lomkhiqizo: I-MOSFET
Isikhathi Sokuvuka: 9 ngi
Uchungechunge: I-SUD
Inani Lephakethe Lefekthri: 2000
Isigaba esingaphansi: Ama-MOSFET
Uhlobo lwe-Transistor: 1 P-Channel
Isikhathi Esijwayelekile Sokubambezeleka Kokuvala: awu 65ns
Isikhathi Sokubambezeleka Kokuvula Okujwayelekile: 8ns
Ingxenye # Iziteketiso: I-SUD19P06-60-BE3
Isisindo Seyunithi: 0.011640 oz

  • Okwedlule:
  • Olandelayo:

  • • I-Halogen-free Ngokusho kwe-IEC 61249-2-21 Incazelo

    • I-TrenchFET® Power MOSFET

    • Ihlolwe i-UIS engu-100%.

    • Ihambisana ne-RoHS Directive 2002/95/EC

    • I-High Side Switch ye-Full Bridge Converter

    • I-DC/DC Converter yesibonisi se-LCD

    Imikhiqizo Ehlobene